Each diffusion area of each transistor must be selected as being of n-type or p-type. This is accomplished by a defining the "window: of n-type (or p-type) doping (implantation), through a special mask layer called n-select (p-select).
1. Select nselect layer from the LSW.
2. Draw a rectangle extending over the active area by 0.6u (2 lambda) in all directions.
This is it ! Our first transistor is finished, now let us make a few million more of the same :-)
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